Boron phosphide under pressure: In situ study by Raman scattering and X-ray diffraction

被引:32
|
作者
Solozhenko, Vladimir L. [1 ]
Kurakevych, Oleksandr O. [2 ]
Le Godec, Yann [2 ]
Kurnosov, Aleksandr V. [3 ]
Oganov, Artem R. [4 ]
机构
[1] Univ Paris 13, LSPM CNRS, F-93430 Villetaneuse, France
[2] UPMC Sorbonne Univ, IMPMC, UMR CNRS 7590, Museum Natl Hist Nat,IRD UMR 206, F-75005 Paris, France
[3] Univ Bayreuth, Bayer Geoinst, D-95440 Bayreuth, Germany
[4] SUNY Stony Brook, Dept Geosci, Ctr Mat Design, Inst Adv Computat Sci, Stony Brook, NY 11794 USA
关键词
PHASE-TRANSITION; BP; DEPENDENCE; BAS; COMPRESSIBILITY; SEMICONDUCTORS; FREQUENCIES; ZINCBLENDE; EQUATION; HARDNESS;
D O I
10.1063/1.4890231
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cubic boron phosphide, BP, has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B-0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state (EOS) data, allowed us to estimate the Gruneisen parameters of the TO and LO modes of zinc-blende structure, gamma G(TO) = 1.26 and gamma G(LO) = 1.13, just like in the case of other A(III)B(V) diamond-like phases, for which gamma G(TO) > gamma G(LO) congruent to 1. We also established that the pressure dependence of the effective electro-optical constant a is responsible for a strong change in relative intensities of the TO and LO modes from I-TO/I-LO similar to 0.25 at 0.1 MPa to I-TO/I-LO similar to 2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory. (C) 2014 AIP Publishing LLC.
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页数:5
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