Noise processes in nanomechanical resonators

被引:349
|
作者
Cleland, AN [1 ]
Roukes, ML
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, iQUEST, Santa Barbara, CA 93106 USA
[3] CALTECH, Dept Phys, Pasadena, CA 91125 USA
关键词
D O I
10.1063/1.1499745
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanomechanical resonators can be fabricated to achieve high natural resonance frequencies, approaching 1 GHz, with quality factors in excess of 10(4). These resonators are candidates for use as highly selective rf filters and as precision on-chip clocks. Some fundamental and some nonfundamental noise processes will present limits to the performance of such resonators. These include thermomechanical noise, Nyquist-Johnson noise, and adsorption-desorption noise; other important noise sources include those due to thermal fluctuations and defect motion-induced noise. In this article, we develop a self-contained formalism for treating these noise sources, and use it to estimate the impact that these noise processes will have on the noise of a model nanoscale resonator, consisting of a doubly clamped beam of single-crystal Si with a natural resonance frequency of 1 GHz. (C) 2002 American Institute of Physics.
引用
收藏
页码:2758 / 2769
页数:12
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