Self-organization in semiconductor physics

被引：1
|
作者：
Parisi, J
机构：
[1] Physical Institute, University of Bayreuth
来源：
BIOSYSTEMS | 1997年 / 42卷 / 2-3期
关键词：
self-organized criticality; pattern formation; non-equilibrium phase transitions; semiconductor breakdown;
D O I：
10.1016/S0303-2647(97)01703-6
中图分类号：
Q [生物科学];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Non-equilibrium dissipative systems from semiconductor physics have prevailed as a paradigmatic testing field for complex non-linear dynamics during the last decade. Especially, low-temperature impact ionization breakdown in extrinsic germanium crystals displays a variety of interesting nonlinear phenomena, such as spontaneous oscillations and filamentary patterns of the current flow. We report on recent experimental results concerning the interplay between spatial and temporal degrees of freedom during the onset of semiconductor breakdown. Quantitative evaluation of characteristic scaling properties supports the applicability of the model of self-organized criticality. (C) 1997 Elsevier Science Ireland Ltd.
引用
收藏
页码：145 / 152
页数：8
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