Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer

被引：37
|
作者：
Zhou, G. D. [1 ]
Lu, Z. S. [1 ]
Yao, Y. Q. [1 ]
Wang, G. [1 ]
Yang, X. D. [1 ,2 ]
Zhou, A. K. [3 ,4 ]
Li, P. [2 ]
Ding, B. F. [1 ,5 ]
Song, Q. L. [1 ,5 ]
机构：
[1] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
[2] Zunyi Normal Coll, Sch Phys & Mech & Elect Engn, Zunyi 563002, Peoples R China
[3] Chinese Acad Sci, ChinaKunming Inst Bot, Kunming 650201, Peoples R China
[4] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[5] Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 15期
基金：
中国国家自然科学基金;
关键词：
PHOTOTRANSISTORS; STORAGE; MATRIX;
D O I：
10.1063/1.4980173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A self-assembled three-dimensional (3-D) MoS2 microsphere-based memristor with a favorable ON/OFF resistance ratio of similar to 10(4), endurance, and retention time is demonstrated at room temperature. The formation and rupture of a localized Ag metallic filament, establishment and destruction of a boundary-based hopping path, and charge trapping and detrapping from the space charge region co-contribute to the bipolar resistive switching memory behaviours observed in the device of Ag/MoS2/ITO. This work may give insight into the mechanism of the resistive switching memory behaviours of a device with a 3-D micro-scale. Published by AIP Publishing.
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页数：7
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