Shot noise in linear macroscopic resistors

被引：17
|
作者：
Gomila, G
Pennetta, C
Reggiani, L
Sampietro, M
Ferrari, G
Bertuccio, G
机构：
[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[2] Univ Barcelona, Res Ctr Bioelect & Nanobiosci, E-08028 Barcelona, Spain
[3] Univ Lecce, INFM, Natl Nanotechnol Lab, I-73100 Lecce, Italy
[4] Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
[5] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.92.226601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. The present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.
引用
收藏
页码：226601 / 1
页数：4
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