Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus

被引:66
|
作者
Wang, Yanlong [1 ]
Cong, Chunxiao [1 ]
Fei, Ruixiang [2 ]
Yang, Weihuang [1 ]
Chen, Yu [1 ]
Cao, Bingchen [1 ]
Yang, Li [2 ]
Yu, Ting [1 ,3 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Washington Univ, Dept Phys, St Louis, MO 63130 USA
[3] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 117542, Singapore
基金
美国国家科学基金会;
关键词
black phosphorus; uniaxial strain; Raman spectroscopy; anisotropy; density functional theory; RAMAN-SPECTROSCOPY; CRYSTALLOGRAPHIC ORIENTATION; ELECTRONIC-PROPERTIES; 2D SEMICONDUCTOR; GRAPHENE; MONOLAYER; TRANSPORT; CONDUCTIVITY; MODULATION; TRANSITION;
D O I
10.1007/s12274-015-0895-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Black phosphorus (BP) is a good candidate for studying strain effects on twodimensional (2D) materials beyond graphene and transition-metal dichalcogenides. This is because of its particular ability to sustain high strain and remarkably anisotropic mechanical properties resulting from its unique puckered structure. We here investigate the dependence of lattice vibrational frequencies on crystallographic orientations in uniaxially strained few-layer BP by in-situ strained Raman spectroscopy. The out-of-plane A(1) (g) mode is sensitive to uniaxial strain along the near-armchair direction whereas the in-plane B-2g and A(2) (g) modes are sensitive to strain in the near-zigzag direction. For uniaxial strains applied away from these directions, all three phonon modes are linearly redshifted. Our experimental observation is explained by the anisotropic influence of uniaxial tensile strain on structural properties of BP using density functional theory. This study demonstrates the possibility of selective tuning of in-plane and out-of-plane phonon modes in BP by uniaxial strain and makes strain engineering a promising avenue for extensively modulating the optical and mechanical properties of 2D materials.
引用
收藏
页码:3944 / 3953
页数:10
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