Neutron detection using boron gallium nitride semiconductor material

被引：27
|
作者：
Atsumi, Katsuhiro [1 ]
Inoue, Yoku [2 ]
Mimura, Hidenori [3 ]
Aoki, Toru [3 ]
Nakano, Takayuki [2 ]
机构：
[1] Shizuoka Univ, Grad Sch Engn, Dept Elect & Elect Engn, Naka Ku, Hamamatsu, Shizuoka 4328561, Japan
[2] Shizuoka Univ, Grad Sch Engn, Dept Elect & Mat Sci, Naka Ku, Hamamatsu, Shizuoka 4328561, Japan
[3] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan
来源：
APL MATERIALS | 2014年 / 2卷 / 03期
关键词：
GROWTH; GAN; RADIOGRAPHY; ENERGY;
D O I：
10.1063/1.4868176
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to alpha-rays but poor sensitivity to gamma-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after alpha-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material. (C) 2014 Author(s).
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页数：6
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