Photoluminescence caused by presence of defects and oxides at the surface of Hg1-xCdxTe

被引：0
|
作者：
Scepanovic, M [1 ]
Hinic, II [1 ]
Jevtic, M [1 ]
机构：
[1] Inst Phys, YU-11080 Belgrade, Yugoslavia
来源：
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of photoluminescence (PL) measurements performed for Hg1-xCdxTe (x=0.165) samples are presented. The surfaces of these samples were modified using long exposure to the atmosphere (series A), etching by 0.5 % Br-methanol during 1 minute (series B) and during 5 minutes (series C). For each series samples PL spectra were measured at different temperatures in the range from 16 to 300 K. PL bands at about 2.1 eV and 2.3 eV are recognized in PL spectra of each series samples. The analysis of PL and Raman spectra shows that the band at similar to2.1 eV is caused by presence of the nonstoichiometric oxides. The band at 2.3 eV originates of organic compounds which are deposited at the surface during etching process. PL of the observed samples decreases after irradiation by intense nanosecond pulse of Nd:YAG laser.
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页码：381 / 384
页数：4
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