TiAlN/TiAlON/Si3N4 tandem absorber for high temperature solar selective applications

被引：121
|
作者：
Barshilia, Harish C. [1 ]
Selvakumar, N.
Rajam, K. S.
Rao, D. V. Sridhara
Muraleedharan, K.
Biswas, A.
机构：
[1] Natl Aeronaut Lab, Surface Engn Div, Bangalore 560017, Karnataka, India
[2] Def Met Res Lab, Electron Microscopy Grp, Hyderabad 500058, Andhra Pradesh, India
[3] Bhabha Atom Res Ctr, Div Spect, Bombay 400085, Maharashtra, India
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期
关键词：
D O I：
10.1063/1.2387897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A tandem absorber of TiAlN/TiAlON/Si3N4 is prepared using a magnetron sputtering process. The graded composition of the individual component layers of the tandem absorber produces a film with a refractive index increasing from the surface to the substrate, which exhibits a high absorptance (0.95) and a low emittance (0.07). The tandem absorber is stable in air up to 600 degrees C for 2 h, indicating its importance for high temperature solar selective applications. The thermal stability of the tandem absorber is attributed to high oxidation resistance and microstructural stability of the component materials at higher temperatures.
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页数：3
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