Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

被引：7
|
作者：
Jiang, DS [1 ]
Bian, LF
Liang, XG
Chang, K
Sun, BQ
Johnson, S
Zhang, YH
机构：
[1] CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[2] Arizona State Univ, CSSER, Tempe, AZ 85287 USA
[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 268卷 / 3-4期
关键词：
molecular beam epitaxy; quantum wells; GaAsSb/GaAs;
D O I：
10.1016/j.jcrysgro.2004.04.051
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：336 / 341
页数：6
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