GaN films deposited by planar magnetron sputtering

The crystal orientation of GaN films deposited on fused quartz substrates by rf planar magnetron sputtering using a mesh to guard against plasma exposure was investigated by X-ray diffraction. Sample films were deposited at constant NZ gas pressure and input power at a range of substrate temperatures between 84 degreesC and 600 degreesC. It was found that GaN films with good crystal orientation can be produced by rf sputtering with the c-axis of GaN crystals oriented normal to the substrate surface in almost all films produced. The crystal 00.2 orientation was good at substrate temperatures exceeding 300 degreesC, however; films deposited at 600 degreesC peeled from the substrate. The fine mesh installed to protect the film from exposure to plasma was found to be very useful for depositing films with a good crystal orientation of 00.2, and the best crystal orientation was realized for a film deposited by sputtering with a target to mesh separation of 30 mm. (C) 2002 Elsevier Science Ltd. All rights reserved.