Silicon nanowire ratioed inverters on bendable substrates

被引：2
|
作者：
Moon, Jeongje [1 ,2 ]
Kim, Yoonjoong [1 ]
Lim, Doohyeok [1 ]
Im, Kyeungmin [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, 145 Anam Ro, Seoul 02841, South Korea
[2] Samsung Elect Co Ltd, LED PKG Dev Grp, 1 Samsung Ro, Yongin 17113, Gyeonggi Do, South Korea
来源：
NANO RESEARCH | 2018年 / 11卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
silicon nanowire; ratioed inverter; n-metal oxide semiconductor (MOS) inverter; p-MOS inverter; bendable substrate; LIMITS; GATE;
D O I：
10.1007/s12274-017-1884-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.
引用
收藏
页码：2586 / 2591
页数：6
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