Characterization of the photothermal interaction on a viscoelastic semiconducting solid cylinder due to ramp-type heating based on green-naghdi theories

This paper is dealing with the photothermal interaction of a homogenous, isotropic, semiconducting, viscothermoelastic solid cylinder in the context of Green-Naghdi theories of generalized thermoelasticity (type-I,-II, and-III). The ramp-type heating has thermally loaded the bounding surface of the cylinder. The governing equations have been constructed in the Laplace transform domain, and the Laplace inversions have been calculated numerically by using the Tzou method. The numerical results for the carrier density increment, temperatures increment, strain, stress, and stress-strain energy have been represented in figures with various values of mechanical relaxation time and ramp-time heat parameter. The mechanical relaxation time has minimal effects on the carrier density function and temperature increment, while its effects on the strain, stresses, and stress-strain energy are significant. The ramp-time heat parameter has significant effects on all the studied functions.