Electron-phonon scattering in graded quantum dots

被引:1
|
作者
Diniz, GS [1 ]
Qu, F [1 ]
Neto, OOD [1 ]
Alcalde, AM [1 ]
机构
[1] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG, Brazil
关键词
theoretical calculations; electron-phonon scattering; GaAs/AlxGa1-xAs;
D O I
10.1590/S0103-97332006000300037
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1-x. As spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation.
引用
收藏
页码:372 / 374
页数:3
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