Compound Semiconductor Electro-optic Modulators for Microwave Photonics Applications

被引：0
|
作者：
Dagli, Nadir [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年
关键词：
BANDWIDTH;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compound semiconductor electro-optic modulators based on substrate-removal are described. Modulators with metal and buried electrodes in bulk GaAs have V-pi of 5 V and 0.3 V respectively. For both types bandwidths exceeding 35 GHz were also demonstrated.
引用
收藏
页码：195 / 196
页数：2
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