Passively Q-switched, intracavity frequency-doubled YVO4/Nd:YVO4/KTP green laser with a GaAs saturable absorber

被引：2
|
作者：
Gao, Shang [1 ]
机构：
[1] Shandong Jiaotong Univ, Sch Sci, Jinan 250023, Peoples R China
来源：
QUANTUM ELECTRONICS | 2015年 / 45卷 / 11期
关键词：
green laser; passive Q-switching; saturable absorber; ND-YVO4/YVO4 COMPOSITE CRYSTAL; DIODE-LASER; END;
D O I：
10.1070/QE2015v045n11ABEH015829
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A diode-pumped, passively Q-switched, intracavity frequency- doubled YVO4/Nd:YVO4/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-mu m-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mu m-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 mu J and peak power of 2.8 kW.
引用
收藏
页码：1000 / 1002
页数：3
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