Improved Monte Carlo algorithm of phonon transport in semiconductor nanodevices

被引:4
|
作者
Essner, O. [1 ]
Dollfus, P. [1 ]
Galdin-Retailleau, S. [1 ]
Saint-Martin, J. [1 ]
机构
[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
关键词
D O I
10.1088/1742-6596/92/1/012079
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we present the main features of an algorithm of phonon transport based on the particle Monte Carlo solution of the Boltzmann Transport Equation. In particular, we have developed an injection technique which consists in replacing a costly reservoir of phonons at thermodynamic equilibrium by an equivalent interface injecting in the device the appropriate phonon distribution. Additionally, we have derived a formulation of phonon-phonon scattering rates which includes realistic phonon dispersion of the material giving accurate frequency-dependence. An algorithm is proposed to improve the treatment of phonon interaction.
引用
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页数:4
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