Influence of excitonic oscillator strengths on the optical properties of GaN and ZnO

被引：6
|
作者：
Mallet, E. [1 ,2 ]
Reveret, F. [1 ,2 ]
Disseix, P. [1 ,2 ]
Shubina, T. V. [3 ]
Leymarie, J. [1 ,2 ]
机构：
[1] Univ Clermont Ferrand 2, IP, F-63000 Clermont Ferrand, France
[2] Ctr Natl Rec Sci, Unite Mixte Rech 6602, IP, F-63171 Aubiere, France
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
DAMPING DISPERSION; POLARITONS; REFLECTANCE; TRANSITIONS; RELAXATION; ABSORPTION; SCATTERING; EMISSION; PHONONS; SPECTRA;
D O I：
10.1103/PhysRevB.90.045204
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on an extensive study of the excitonic properties of GaN and ZnO bulk samples with an accurate determination of excitonic parameters by linear and nonlinear spectroscopies. The in-depth comparative study is carried out between these two competitive wide band gap semiconductors for a better understanding of damping processes. In GaN, it is shown that due to microscopic disorder, such as lattice strain fluctuations, inhomogeneous broadening prevails over homogeneous broadening at low temperature. The opposite situation occurs in ZnO, where the homogeneous broadening dominates due to resonant Rayleigh scattering of exciton polaritons and their interaction with acoustic phonons. This comparative study also allows us to highlight the influence of oscillator strengths on spectrally resolved four-wave mixing and time-integrated four-wave mixing.
引用
收藏
页数：9
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