In situ analysis of negative-tone resist pattern formation using organic-solvent-based developer process

被引：13
|
作者：
Santillan, Julius Joseph [1 ,2 ]
Yamada, Keisaku [1 ]
Itani, Toshiro [2 ]
机构：
[1] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan
[2] EUVL Infrastruct Dev Ctr Inc, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 01期
关键词：
ULTRAVIOLET RESIST; DISSOLUTION; FILMS; PHOTORESISTS; BEHAVIOR;
D O I：
10.7567/APEX.7.016501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In situ resist "pattern formation" analysis during the development process using high-speed atomic force microscopy has been improved for application not only for conventional aqueous 0.26 N tetramethylammonium hydroxide (aq. TMAH), but also organic solvent n-butyl acetate (nBA) developers. Comparative investigations of resist dissolution in these developers, using the same resist material (hybrid of polyhydroxystyrene and methacrylate), showed a grainlike, uniform dissolution of the "unexposed resist film" in nBA development and uneven dissolution of the "exposed resist film" in aq. TMAH development. These results suggest the importance of dissolution uniformity in further improving the resulting pattern line width roughness. (C) 2014 The Japan Society of Applied Physics
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页数：4
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