Studies of the multi-quantum barrier effect of GaAs/AlGaAs high-power quantum-well lasers

被引:0
|
作者
Yoon, SH [1 ]
Kim, HJ [1 ]
Han, BH [1 ]
机构
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
关键词
multi-quantum barrier; high power laser diode; leakage currents; temperature characteristics;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe a two-dimensional model for quantum-well lasers with multi-quantum barriers (MQB) that solves self-consistently the semiconductor equations, together with the complex scalar wave equation and thermal transfer equation. and we use it to investigate thermal and electrical characteristics in AlGaAs laser diodes. We want to obtain a very small far-field angle and a large optical power density, which means a low conduction band offset and it small difference in optical index. By inserting an optimized MQB in an AlGaAs high-power laser with a low conduction-band offset, we found that the threshold currents and the leakage currents could be reduced in high temperatures.
引用
收藏
页码:400 / 403
页数:4
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