Influence of sputtering power on structure and photocatalyst properties of DC magnetron sputtered TiO2 thin film

被引：33
|
作者：
Pansila, P. [1 ,3 ]
Witit-anun, N. [2 ,3 ]
Chaiyakun, S. [2 ,3 ]
机构：
[1] Kasetsart Univ, Fac Resources & Environm, Mat Sci & Appl Phys Res Unit, Sriracha Campus, Chon Buri 20131, Thailand
[2] Burapha Univ, Dept Phys, Plasma Surface Sci Res Lab PSS, Fac Sci, Chon Buri 20131, Thailand
[3] Minist Educ, CHE, Thailand Ctr Excellence Phys ThEP, Bangkok 10400, Thailand
来源：
ISEEC | 2012年 / 32卷
关键词：
DEPOSITION;
D O I：
10.1016/j.proeng.2012.02.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TiO2 thin films were deposited by DC reactive magnetron sputtering technique on silicon wafer and glass slide at sputtering power of 210 W and 230 W. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The distance of Ti-target to substrate holder (d(s-t)) was 120 mm. The films were characterized by X-ray diffraction (XRD) and atomic force microscopy (Lambda FM), respectively. The photocatalytic activity was evaluated by the measurement of the decomposition of methylene blue after UV irradiation. It was found that the crystalline structure of TiO2 thin films strongly depended on the sputtering power. The mixed phase of anatas/rutile TiO2 thin films were successfully obtained with the sputtering power of 230 W. While anatase TiO2 thin films were obtained with sputtering power of 210 W. The TiO2 thin film with anatase structure exhibited the best photocatalytic activity. (C) 2010 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of I-SEEC2011
引用
收藏
页码：862 / 867
页数：6
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