Research progress and challenges of copper indium gallium selenide thin film solar cells

被引:2
|
作者
Tao Jia-Hua [1 ]
Chu Jun-Hao [1 ,2 ]
机构
[1] East China Normal Univ, Nanophoton & Adv Instrument Engn Res Ctr, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
基金
中国国家自然科学基金; 上海市自然科学基金;
关键词
copper indium gallium selenide?Cu?In?Ga?Se2?CIGS?solar cell; component gradient; alkali metal; cd-free buffer layer; industrialization; tandem; LOW-TEMPERATURE GROWTH; FLEXIBLE CU(IN; GA)SE-2; ELECTRONIC-PROPERTIES; CDS BUFFER; CIGS; EFFICIENCY; CU(IN; NA; CHALCOPYRITE; PHOTOCURRENT;
D O I
10.11972/j.issn.1001-9014.2022.02.004
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The industrialization of copper indium gallium selenide???Cu???In???Ga???Se2???CIGS???solar cells has attractedworldwide attention.As a thin film solar cell with high conversion efficiency???its efficiency can be compared with thatof crystalline silicon solar cell???and the highest efficiency reaches23.35% at present.For small-area laboratory solarcells???the main research focus is to accurately control the stoichiometric ratio and efficiency of absorption layer.For in???dustrial production???besides stoichiometric ratio and efficiency???cost???reproducibility???output and process compatibilityare very important in commercial production.The research progress of different preparation processes???gradient controlof absorption layer composition???post-deposition treatment of alkali metal???wide band gap cadmium-free buffer layer???transparent conductive layer and flexible substrate were reviewed.From the perspective of the efficiency of CIGS solarcells???the transfer of record-breaking high-efficiency solar cell technology in the laboratory to the average industrial pro???duction level brings obvious challenges
引用
收藏
页码:395 / 412
页数:18
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