Thin Films and Techniques for SAW Sensor Operation above 1000°C

被引:12
|
作者
Behanan, R. [1 ]
Moulzolf, S. C. [1 ]
Call, M. [1 ]
Bernhardt, G. [1 ]
Frankel, D. [1 ]
Lad, R. J. [1 ]
da Cunha, M. Pereira [1 ]
机构
[1] Univ Maine, Lab Surface Sci & Technol LASST, Orono, ME 04469 USA
关键词
new thin film electrodes for SAW sensors; high temperature langasite sensors; interfacial layer; nano-whisker; Pt/Al2O3; Pt-Rh/HfO2-; DEVICES;
D O I
10.1109/ULTSYM.2013.0260
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
High temperature (300 degrees C to 1400 degrees C) wireless sensors have applications in energy exploration and generation, harsh environment industrial processing, and aerospace engineering. Existing technology developed at the University of Maine allows the fabrication of surface acoustic wave (SAW) langasite (LGS) sensors with Pt-Rh/ZrO2 electrodes that can deliver long-term stable operation up to 850 degrees C. Since LGS remains piezoelectric up to its melting point of similar to 1400 degrees C, it is desirable to extend the current SAW sensor temperature range of operation. In addition, it is desirable to diminish the SAW interdigital transducer (IDT) electrode dimensions to increase the wireless frequency of operation towards the GHz range. In this work, new thin film electrode materials have been investigated to allow the operation of SAW one-port resonators up to 1000 degrees C and beyond. In particular, alternative Pt/Al2O3 and Pt-Rh/HfO2 thin film electrode compositions are presented, which yield operation of SAW resonator sensors up to 1100 degrees C. In addition to a previously used capping layer, an interfacial layer has been added between the LGS and the electrodes to delay any interdiffusion between the materials and extend the temperature and/or time of sensor performance. Finally, it is also reported in this work that exposure of untreated SAW device electrodes with 120 nm thick and 2 mu m wide Pt-Rh/ZrO2 co-deposited IDT fingers to temperatures above 850 degrees C can create long platinum-rich nano-whiskers. These structures short-circuit the SAW interdigital (IDT) fingers, rendering the device unusable. The short-circuit problem was solved by the use of multilayered electrode structures and the used of the capping layer.
引用
收藏
页码:1005 / 1008
页数:4
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