Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

被引：17
|
作者：
Yamamoto, Shunsuke [1 ]
Kitanaka, Takahisa [1 ]
Miyashita, Tokuji [1 ]
Mitsuishi, Masaya [1 ]
机构：
[1] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan
来源：
NANOTECHNOLOGY | 2018年 / 29卷 / 26期
基金：
日本学术振兴会;
关键词：
resistive switching; hybrid; conductive polymer; SiO2; ROOM-TEMPERATURE; FILMS; DEGRADATION; PLASTICITY; NANOFILMS; MECHANISM;
D O I：
10.1088/1361-6528/aabdc6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)|vertical bar SiO2 vertical bar PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS vertical bar SiO2 interface.
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页数：5
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