Impact of switches resistance on successive approximation of ADC dynamic performance

被引：0

作者：

Bocharov, Y. ^{[1
]}

Butuzov, V. ^{[1
,3
]}

Shunkov, V. ^{[3
]}

Kus, O. ^{[2
]}

Prokopyev, V. ^{[2
]}

机构：

[1] Natl Res Nucl Univ, MEPhI Moscow Engn Phys Inst, Kashirskoe Shosse 31, Moscow 115409, Russia

[2] OKB Fifth Generat LLC, Nikolaeva St 11, Novosibirsk 630090, Russia

[3] Megarad LLC, Nikolaeva St 11, Novosibirsk 630090, Russia

来源：

2ND INTERNATIONAL TELECOMMUNICATION CONFERENCE ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS AND TECHNOLOGIES | 2019年 / 498卷

基金：

俄罗斯科学基金会;

关键词：

SHAPING SAR-ADC; CMOS; CALIBRATION; 10-BIT;

D O I：

10.1088/1757-899X/498/1/012005

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This paper discusses the degradation of the dynamic performance in switched capacitors based on successive approximation analog-to-digital converters (SAR ADCs), caused by the resistance of the switch, which connects a voltage reference to a common bus of switched capacitor array. Based on the analysis of the phenomenon, the techniques for reducing its influence are shown. They were used in the design of micro-power SAR ADC, which is presented in the paper.

引用

页数：6

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