Epitaxial perovskite Bi2ZnTiO6 thin film with high tetragonality

被引：4

作者：

Ahn, Yoonho ^{[1
]}

Son, Jong Yeog ^{[1
]}

机构：

[1] Kyung Hee Univ, Inst Nat Sci, Dept Appl Phys, Coll Appl Sci, Yongin 446701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 433卷

基金：

新加坡国家研究基金会;

关键词：

Crystal structure; Physical vapor deposition processes; Perovskites; Ferroelectric materials; FERROELECTRIC MATERIALS;

D O I：

10.1016/j.jcrysgro.2015.10.008

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We fabricated epitaxially (001)-oriented Bi2ZnTiO6 thin films on single-crystalline (100) SrTiO3 substrates with (001) SrRuO3 top electrodes by means of pulsed laser deposition. The Bi2ZnTiO6 thin film was of tetragonal structure and exhibited a c/a ratio of about 1.18, higher than that of PbTiO3 (1.06). Significantly, the Bi2ZnTiO6 thin film showed a high remnant polarization of 53 mu C/cm(2) (2P(r) similar to 106 mu C/cm(2)), which indicates high ferroelectricity suitable for applications such as ferroelectric random access memory. Atomic force microscopy showed that the Bi2ZnTiO6 thin film had flat and clear terrace patterns due to the layer-by-layer growth mode. Furthermore, piezoelectric force microscopy showed that the film had a stripe ferroelectric domain structure. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：86 / 88

页数：3

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