Large Single Crystal SnS2 Flakes Synthesized from Coevaporation of Sn and S

被引:49
|
作者
Yang, Y. -B. [1 ]
Dash, J. K. [1 ]
Littlejohn, A. J. [1 ]
Xiang, Y. [1 ]
Wang, Y. [2 ]
Shi, J. [2 ]
Zhang, L. H. [3 ]
Kisslinger, K. [3 ]
Lu, T. -M. [1 ]
Wang, G. -C. [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, 110 Eighth St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, 110 Eighth St, Troy, NY 12180 USA
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Bldg 735,POB 5000, Upton, NY 11973 USA
关键词
SCANNING-TUNNELING-MICROSCOPY; RAMAN-SCATTERING; ELECTRONIC-STRUCTURE; GROWTH; PERFORMANCE; STATE; PHOTOLUMINESCENCE; CAPACITY; GRAPHENE; EPITAXY;
D O I
10.1021/acs.cgd.5b01512
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Remarkable properties of layered metal dichalcogenides and their potential applications in various fields have raised intense interest worldwide. We report tens of microns-sized ultrathin single crystal SnS2 flakes grown on amorphous substrates using a simple one-step thermal coevaporation process. X-ray pole figure analysis reveals that a majority of flakes are oriented with the (0001) plane parallel to the substrate and a preferred fiber texture. For few-layer-thick SnS2, Moire patterns of 6-fold and 12-fold symmetries are observed by transmission electron microscopy imaging and diffraction. These patterns result from the relative rotation between SnS2 layers in the ultrathin flake. The 12-fold symmetry is,consistent with a known quasicrystal pattern. The photoluminescence spectrum supports that these ultrathin flakes possess a direct bandgap. Carrier lifetime measured by time-resolved photoluminescence of a single flake is a few nanoseconds. These results improve our understanding of the formation and shape of ultrathin SnS2 flakes.
引用
收藏
页码:961 / 973
页数:13
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