CdZnSe/Zn(Be)Se quantum dot structures: Size, chemical composition and phonons

被引：0
|
作者：
Gu, Y [1 ]
Kuskovsky, IL [1 ]
Fung, J [1 ]
Robinson, R [1 ]
Herman, IP [1 ]
Neumark, GF [1 ]
Zhou, X [1 ]
Guo, SP [1 ]
Tamargo, MC [1 ]
机构：
[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
来源：
PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2004年 / 799卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The size and chemical composition of optically active CdZnSe/ZnSe and CdZnSe/Zn0.97Be0.03Se quantum dots (QDs) are determined using photoluminescence, photoluminescence excitation and polarized Raman scattering spectroscopies. We show that the addition of Be into the barrier enhances the Cd composition and the quantum size effect of optically active QDs. Additionally, surface phonons from QDs are observed in CdZnSe/ZnBeSe nanostructures.
引用
收藏
页码：299 / 304
页数：6
相关论文
共 50 条
  • [1] Optical investigation of CdSe/Zn(Be)Se quantum dot structures: size and Cd composition
    Gu, Y
    Kuskovsky, IL
    Fung, J
    Neumark, GF
    Zhou, X
    Guo, SP
    Tamargo, MC
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 779 - 782
  • [2] Phonons in InAs quantum dot structures
    Milekhin, Alexander
    Toropov, Alexander
    Zahn, Dietrich R. T.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 9, 2009, 6 (09): : 2033 - +
  • [3] Determination of size and composition of optically active CdZnSe/ZnBeSe quantum dots
    Gu, Y
    Kuskovsky, IL
    Fung, J
    Robinson, R
    Herman, IP
    Neumark, GF
    Zhou, X
    Guo, SP
    Tamargo, MC
    APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3779 - 3781
  • [4] Optical phonons in InAs and AlAs quantum dot structures
    Milekhin, AG
    Toropova, AI
    Bakarov, AK
    Ladanov, MY
    Zanelatto, G
    Galzerani, JC
    Schulze, S
    Zahn, DRT
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 45 - 49
  • [5] Interface phonons in InAs and AlAs quantum dot structures
    Milekhin, AG
    Toropov, AI
    Bakarov, AK
    Tenne, DA
    Zanelatto, G
    Galzerani, JC
    Schulze, S
    Zahn, DRT
    PHYSICAL REVIEW B, 2004, 70 (08): : 085314 - 1
  • [6] Raman study of interface phonons in InAs quantum dot structures
    Milekhin, AG
    Tenne, DA
    Toropov, AI
    Bakarov, AK
    Schulze, S
    Zahn, DRT
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL. 1, NO. 11, 2004, 1 (11): : 2629 - 2633
  • [7] Dependence of Quantum Dot Toxicity In Vitro on Their Size, Chemical Composition, and Surface Charge
    Sukhanova, Alyona
    Bozrova, Svetlana
    Gerasimovich, Evgeniia
    Baryshnikova, Maria
    Sokolova, Zinaida
    Samokhvalov, Pavel
    Guhrenz, Chris
    Gaponik, Nikolai
    Karaulov, Alexander
    Nabiev, Igor
    NANOMATERIALS, 2022, 12 (16)
  • [8] Time-resolved photoluminescence in CdSe/CdZnSe and CdSe/CdMnSe coupled quantum dot structures
    Oh, Eunsoon
    Choi, D. G.
    Kim, Shin
    Lee, T. K.
    Park, J. H.
    Lee, S.
    Furdyna, J. K.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (02) : 614 - 618
  • [9] Phonons in Ge/Si quantum dot structures: influence of growth temperature
    Milekhin, AG
    Nikiforov, AI
    Ladanov, MY
    Pchelyakov, OP
    Lobanov, DN
    Novikov, AV
    Krasil'nik, ZF
    Schulze, S
    Zahn, DRT
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 464 - 468
  • [10] Interface phonons in CdSe/ZnSe self-assembled quantum dot structures
    Rho, H
    Smith, LM
    Jackson, HE
    Lee, S
    Dobrowolska, M
    Furdyna, JK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 165 - 168
12345