A class-E power amplifier based on an extended resonance technique

被引：10
|
作者：
Martin, AL [1 ]
Mortazawi, A
机构：
[1] ITT GaAs Tek, Roanoke, VA 24019 USA
[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 01期
关键词：
Circuit resonance - Electric network topology - Electronic equipment manufacture - Integrated circuit layout - MESFET devices - Microstrip devices - Semiconducting gallium arsenide;
D O I：
10.1109/22.817476
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a class-E power amplifier using four 1-W GaAs MESFET's at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET's with 67% power-added efficiency at 935 MHz.
引用
收藏
页码：93 / 97
页数：5
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