The current development of MRAM (Magnetic random access memory)

被引：0
|
作者：
Sumita, S [1 ]
机构：
[1] TDK Corp, Corp R&D Planning Dept, Chiba 2728558, Japan
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING FOR RESOURCES, VOL 1 | 2001年
关键词：
MRAM; PSV; MTJ; word line; sense line;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MRAMs have been studied with special reference to other memories such as DRAM, Flash memory, SRAM, and FeRAM. By applying cutting-edge technologies of MIT&TDK MRAM joint project, PSV (Pseudo Spin-Valve)-MRAM structure was accomplished with the size of 80nm x 150nm MR (Magnetoresistive) elements, NiFe(6nm)/Cu(3-6nm)/Co(4nm). Those MR elements were sandwiched by word lines and sense lines on Si-wafer. Both line distances were high density of approximately 300nm. The switching phenomena, or recording states of "0" and "1", of NiFe(soft magnetic layer)/ Cu(non-magnetic layer)/ Co(hard magnetic layer) thin films were observed reproducibly. The characteristic points of PSV-MRAM and MTJ (Magnetic Tunneling Junction)-MRAM are also discussed.
引用
收藏
页码：168 / 172
页数：5
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