Substrate carrier concentration dependent plasmon-phonon coupled modes at the interface between graphene and semiconductors

被引:1
|
作者
Wang, Lei [1 ,2 ,3 ,4 ]
Cai, Wei [1 ,2 ,4 ]
Niu, Linyu [1 ,2 ,4 ]
Luo, Weiwei [1 ,2 ,4 ]
Ma, Zenghong [1 ,2 ,4 ]
Du, Chenglin [1 ,2 ,4 ]
Xue, Shuqing [1 ,2 ,4 ]
Zhang, Xinzheng [1 ,2 ,4 ]
Xu, Jingjun [1 ,2 ,4 ]
机构
[1] Nankai Univ, TEDA Appl Phys Inst, Key Lab Weak Light Nonlinear Photon, Minist Educ, Tianjin 300457, Peoples R China
[2] Nankai Univ, Sch Phys, Tianjin 300457, Peoples R China
[3] Xinyang Normal Univ, Coll Phys & Elect Engn, Xinyang 464000, Peoples R China
[4] Synerget Innovat Ctr Chem Sci & Engn, Tianjin 300071, Peoples R China
来源
OPTICS EXPRESS | 2015年 / 23卷 / 23期
基金
中国国家自然科学基金;
关键词
GAAS;
D O I
10.1364/OE.23.029533
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The coupled modes between graphene plasmons and surface phonons of a semiconductor substrate are investigated, which can be efficiently controlled by carrier injection of the substrate. A new physical mechanism on tuning plasmon-phonon coupled modes (PPCMs) is proposed due to the fact that the energy and lifetime of substrate surface phonons depend a lot on the carrier concentration. Specifically, the change of dispersion and lifetime of PPCMs can be controlled by the carrier concentration of the substrate. The energy of PPCMs for a given momentum increases as the carrier concentration of the substrate increases. On the other hand, the momentum of PPCMs for a given energy decreases when the carrier concentration of the substrate increases. The lifetime of PPCMs is always larger than the intrinsic lifetime of graphene plasmons without plasmon-phonon coupling. (C) 2015 Optical Society of America
引用
收藏
页码:29533 / 29542
页数:10
相关论文
共 50 条
  • [1] Terahertz plasmon and infrared coupled plasmon-phonon modes in graphene
    Dong, H. M.
    Li, L. L.
    Wang, W. Y.
    Zhang, S. H.
    Zhao, C. X.
    Xu, W.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 44 (09): : 1889 - 1893
  • [2] Decay of coupled plasmon-phonon modes in heavily doped semiconductors
    Kozorezov, AG
    Wigmore, JK
    Giltrow, M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (23) : 4863 - 4874
  • [3] Plasmon and coupled plasmon-phonon modes in graphene in the presence of a driving electric field
    Zhao, C. X.
    Xu, W.
    Dong, H. M.
    Peeters, F. M.
    [J]. PHYSICAL REVIEW B, 2014, 89 (19):
  • [4] Interaction between intersubband Bernstein modes and coupled plasmon-phonon modes
    Kulik, LV
    Kukushkin, IV
    Kirpichev, VE
    von Klitzing, K
    Eberl, K
    [J]. PHYSICAL REVIEW B, 2000, 61 (19) : 12717 - 12720
  • [5] The lower branch of plasmon-phonon coupled modes
    Fischler, W
    Bratschitsch, R
    Höpfel, RA
    Zandler, G
    Strasser, G
    Unterrainer, K
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (08) : 813 - 817
  • [7] COUPLED PLASMON-PHONON MODES IN COP3
    KLICHE, G
    [J]. SOLID STATE COMMUNICATIONS, 1991, 80 (01) : 73 - 77
  • [8] Inelastic carrier lifetime in a coupled graphene/electron-phonon system: Role of plasmon-phonon coupling
    Ahn, Seongjin
    Hwang, E. H.
    Min, Hongki
    [J]. PHYSICAL REVIEW B, 2014, 90 (24):
  • [9] Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures
    Hauber, Anna
    Fahy, Stephen
    [J]. PHYSICAL REVIEW B, 2017, 95 (04)
  • [10] Plasmon-phonon strongly coupled mode in epitaxial graphene
    Liu, Yu
    Willis, R. F.
    [J]. PHYSICAL REVIEW B, 2010, 81 (08):