Cavity enhanced third-harmonic generation in Si:B pumped with intense terahertz pulses

被引：0
|
作者：
Meng, Fanqi [1 ]
Thomson, Mark D. [1 ]
Klug, Bernhard [1 ]
ul-Islam, Qamar [1 ]
Pashkin, Alexej [2 ]
Schneider, Harald [2 ]
Roskos, Hartmut G. [1 ]
机构：
[1] Goethe Univ Frankfurt, Phys Inst, D-60438 Frankfurt, Germany
[2] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
来源：
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年
关键词：
D O I：
10.1109/irmmw-thz.2019.8874582
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report third-harmonic generation (THG) of terahertz free-electron laser (FEL) pulses in Si:B at cryogenic temperatures. The physical mechanism of THG is attributed to the free-carrier chi((3)) nonlinearity due to the non-parabolicity of the valence band. The value of chi((3)) increases as a function of the carrier density, which are generated via impact ionization of the boron dopants under irradiation by the FEL pulses. By positioning the Si:B in a one-dimensional photonic crystal (1D PC) cavity, the measured THG intensity increases by a factor of about 200.
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