Study of Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well Under Different Strain Conditions

被引：0
|
作者：
Yeh, Shu-Ting [1 ]
Wu, Yuh-Renn [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we analyze the optical anisotropic behavior for the (1122), and (2021)-plane semipolar InGaN/GaN single QW light emitting diodes (LEDs). The light emission polarization ratios of the (1122), and (2021)-plane semipolar InGaN/GaN LEDs with different In compositions and strain relaxation were studied. Our results provide an useful information for designing the semipolar (1122), and (2021)-plane InGaN/GaN quantum well.
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