Effects of chemical interaction between Ta and SiOF on the crystallinity of Cu and Ta in Cu/Ta/SiOF films

被引:7
|
作者
Lee, KW [1 ]
Lee, SY [1 ]
Yang, SH [1 ]
Kim, YI [1 ]
Park, JW [1 ]
机构
[1] Hanyang Univ, Dept Met Engn, Seongdong Ku, Seoul 133791, South Korea
关键词
tantalum; copper; SiOF; crystallinity; defluorination; interface;
D O I
10.1143/JJAP.38.L1457
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interactions between Ta and SiOF films were investigated. The effect of these interactions on the crystallinity of Cu and Ta films was also examined. It was found that much a rougher interface was formed at the Ta/SiOF interface than at the Ta/SiO(2) interface. This clearly resulted from a strong interaction between Ta and SiOF occurring through the defluorination of SiOF film during Ta sputter deposition. Ta oxides and fluorides were observed to form at the interface of Ta/SiOF, which resulted in the degradation of the Ta (002) texture. Furthermore: the degradation of Ta crystallinity led to the reduction of the Cu (Ill) texture by causing a deficiency in interfacial heteroepitaxiality.
引用
收藏
页码:L1457 / L1459
页数:3
相关论文
共 50 条
  • [1] Electroplated Cu and sputtered Ta crystallographic texture degradation in Cu/Ta/SiOF layered structures
    Lee, KW
    Lee, S
    Park, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (03) : C131 - C135
  • [2] Dielectric constant stability and thermal stability of Cu/Ta/SiOF/Si multilayer films
    Lee, S
    Yang, SH
    Moon, HS
    Park, JW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (01): : 225 - 228
  • [3] Thermal stability of sputtered Ta PECVD SiOF films for intermetal dielectric application
    Kim, K
    Park, S
    Lee, GS
    PROCEEDINGS OF THE SYMPOSIA ON ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION I AND INTERCONNECT AND CONTACT METALLIZATION: MATERIALS, PROCESSES, AND RELIABILITY, 1999, 98 (06): : 165 - 169
  • [4] Thermal stability and interaction between SiOF and Cu film
    Mei, YJ
    Chang, TC
    Sheu, JD
    Yeh, WK
    Pan, FM
    Chang, CY
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 433 - 439
  • [5] Size effect on crack formation in Cu/Ta and Ta/Cu/Ta thin film systems
    Gruber, P
    Böhm, J
    Wanner, A
    Sauter, L
    Spolenak, R
    Artz, E
    NANOSCALE MATERIALS AND MODELING-RELATIONS AMONG PROCESSING, MICROSTRUCTURE AND MECHANICAL PROPERTIES, 2004, 821 : 349 - 355
  • [6] Effects of Cu self-capping and Ta capping on nanometer-sized Cu films sputter-deposited on β-Ta
    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
    Mater. Trans., 1 (1-7):
  • [7] A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si(111) structure
    Moshfegh, AZ
    Akhavan, O
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (04) : 165 - 170
  • [8] Effects of Cu Self-Capping and Ta Capping on Nanometer-Sized Cu Films Sputter-Deposited on β-Ta
    Tanimoto, Hisanori
    Sugimori, Takayuki
    Kumamoto, Shoichiro
    Matsui, Hazuki
    Mizubayashi, Hiroshi
    MATERIALS TRANSACTIONS, 2011, 52 (01) : 1 - 7
  • [9] Chemical stability of Ta diffusion barrier between Cu and Si
    Laurila, T
    Zeng, K
    Kivilahti, JK
    Molarius, J
    Suni, I
    THIN SOLID FILMS, 2000, 373 (1-2) : 64 - 67
  • [10] MONOLAYER SM FILMS ON TA AND CU SUBSTRATES
    TAO, L
    GOERING, E
    HORN, S
    DENBOER, ML
    PHYSICAL REVIEW B, 1993, 48 (20): : 15289 - 15296