Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs

被引：55
|
作者：
Kim, Bo Kyoung [1 ]
On, Nuri [1 ]
Choi, Cheol Hee [1 ]
Kim, Min Jae [1 ]
Kang, Shinhyuck [2 ]
Lim, Jun Hyung [3 ]
Jeong, Jae Kyeong [1 ]
机构：
[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[2] Samsung Corning Adv Glass, Res & Dev Grp, Gumi 39396, South Korea
[3] Samsung Display, Res & Dev Ctr, Yongin 17113, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Thin film transistors; Iron; Logic gates; Crystals; Substrates; Lattices; Crystallization; indium gallium tin oxide; high mobility; reliability; thin-film transistors;
D O I：
10.1109/LED.2021.3055940
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports the fabrication of high performance polycrystalline InGaSnO (IGTO) thin-film transistors (TFTs) at a low temperature of 400 degrees C. The microstructure of IGTO films was analyzed using X-ray diffraction and high-resolution transmission electron microscopy. The fabricated polycrystalline IGTO TFTs exhibited an unexpected high mobility of 116.5 cm(2)/Vs, threshold voltage of 0.47 V, low subthreshold gate swing of 134 mV/decade, and I-ON/OFF ratio of > 1 x 10(9). Moreover, the stable behavior against external gate bias stress was observed for crystalline IGTO TFTs, which was attributed to the high degree of metal-oxygen lattice ordering.
引用
收藏
页码：347 / 350
页数：4
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