Field emission from a-C:H and a-C:H:N

被引：32
|
作者：
Amaratunga, GAJ [1 ]
Silva, SRP [1 ]
机构：
[1] UNIV CAMBRIDGE, DEPT ENGN, CAMBRIDGE CB2 1PZ, ENGLAND
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷
关键词：
D O I：
10.1016/0022-3093(95)00774-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Parallel plate field emission measurements using a-C:H and a-C:H:N thin-film cathodes deposited at room temperature in a magnetically confined radiofrequency plasma enhanced chemical vapor deposition chamber reveal a low emission barrier of 0.05 eV. The onset fields for emission are in the 20 to 30 V/mu m range. Currents which are two orders higher were measured from the a-C:H:N films compared to a-C:H films. A current density of 0.2 mA/cm(2) (taking the entire film surface as the emitting area) at 40 V/mu m was obtained from an a-C:H:N film with 11 at.% of N. An a-C:H:N film with 15% N gave a space charge limited current density of 0.2 mA/cm(2) at 20 V/mu m.
引用
收藏
页码：611 / 614
页数：4
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