Leakage Current Behaviors of SrTiO3 Capped Mn-doped Polycrystalline BiFeO3 Thin Film

被引：2
|
作者：
Kim, S. W. [1 ]
Lee, M. H. [2 ]
Choi, H. I. [1 ]
Kim, D. J. [2 ]
Park, J. S. [2 ]
Kim, M. H. [2 ]
Song, T. K. [2 ]
Do, D. [3 ]
Kim, W. J. [1 ]
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyungnam, South Korea
[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyungnam, South Korea
[3] Keimyung Univ, Dept Adv Mat Engn, Taegu 704701, South Korea
来源：
FERROELECTRICS | 2013年 / 454卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
SrTiO3; BiFeO3; reduced leakage current; pulsed laser deposition;
D O I：
10.1080/00150193.2013.842451
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The polycrystalline Mn 1% doped BFO (BFMO) thin film was deposited on Pt(111)/Ti/SiO2/Si(100) substrate by pulsed laser deposition. A thin SrTiO3 capping layer was grown on top of deposited Bi(Fe0.99Mn0.01)O-3 thin film. The structural and electrical properties of STO/BFMO thin film were investigated. By capping a thin STO on top of BFMO, leakage current density of capacitor was improved greatly compare to that of the pure BFMO without degrading ferroelectricity.
引用
收藏
页码：19 / 22
页数：4
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