Modeling of the Plasma Electrode Bias in the Negative Ion Sources with 1D PIC Method

被引：0

作者：

Matsushita, D. ^{[1
]}

Kuppel, S. ^{[1
]}

Hatayama, A. ^{[1
]}

Fukano, A. ^{[2
]}

Bacal, M. ^{[3
]}

机构：

[1] Keio Univ, Grad Sch Sci & Technol, Kouhoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan

[2] Tokyo Metropolitan Coll Inst Technol, Mech & Syst Engn Cource, Dept Monozukuri, Tokyo 140 0011, Japan

[3] Ecole Polytech, UMr 7648, Lab Phys Technol Plasmas, Palaiseau 91128, France

来源：

NEGATIVE IONS, BEAMS AND SOURCES | 2009年 / 1097卷

关键词：

Negative ion source; Particle-in-cell modeling; PE bias;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

引用

页码：38 / +

页数：2

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