Pd-Vacancy Complex in Ge: TDPAC and Ab initio Study

被引：1

作者：

Abiona, Adurafimihan A. ^{[1
]}

Kemp, Williams ^{[1
]}

Timmers, Heiko ^{[1
]}

机构：

[1] Univ New S Wales, UNSW Canberra, Sch Phys Environm & Math Sci, Canberra, BC 2610, Australia

来源：

INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷

关键词：

Semiconductor defects; Time differential perturbed angular correlation; Germanium; Density functional theory; GERMANIUM; DEFECTS;

D O I：

10.1063/1.4865614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different gamma-gamma perturbed angular correlation (TDPAC) technique using the Pd-100(-> Rh-100) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 degrees C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.

引用

页码：105 / 108

页数：4

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