Photo-pyro-piezo-electric elastic bending method: Investigation of metal-semiconductor structure

被引：0

作者：

Todorovic, DM ^{[1
]}

Nikolic, PM ^{[1
]}

Smiljanic, M ^{[1
]}

Bojicic, AI ^{[1
]}

Vasiljevic-Radovic, DG ^{[1
]}

Radulovic, KT ^{[1
]}

机构：

[1] Univ Belgrade, Ctr Multidisciplinary Studies, YU-11030 Belgrade, Yugoslavia

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the ac-photovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.

引用

页码：231 / 234

页数：4

共 8 条

[1] DETERMINATION OF ELECTRIC-FIELD INTENSITY AT A METAL-SEMICONDUCTOR CONTACT BY ELECTROABSORPTION METHOD
TYAGAI, VA
SNITKO, OV
POPOV, VB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 148 - &
[2] A moment method analysis of saw interaction in periodic metal-semiconductor structure
Elkordy, M
Taha, TE
Gomaa, A
ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS, 2001, : 1583 - 1586
[3] SPECTROSCOPIC INVESTIGATION OF THE ELECTRIC-FIELD DISTRIBUTION IN A METAL-SEMICONDUCTOR SYSTEM UNDER CARRIER PHOTOINJECTION CONDITIONS
AGEKYAN, VT
BEREZHNAYA, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1002 - 1004
[4] SPECTROSCOPIC INVESTIGATION OF THE ELECTRIC FIELD DISTRIBUTION IN A METAL-SEMICONDUCTOR SYSTEM UNDER CARRIER PHOTOINJECTION CONDITIONS.
Agekyan, V.T.
Berezhnaya, A.A.
Soviet physics. Semiconductors, 1980, 14 (09): : 1002 - 1004
[5] Method to determine the interface's fractal dimensions of metal-semiconductor electric contacts from their static instrumental characteristics
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[6] Method to determine the interface’s fractal dimensions of metal-semiconductor electric contacts from their static instrumental characteristics
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[7] Comparative investigation of sheet metal forming processes by the elastic-plastic finite element method with emphasis on the effect of bending
Yang, D.Y.
Shim, H.B.
Chung, W.J.
Engineering computations, 1990, 7 (04): : 274 - 283
[8] The effect of external electric fields on the electronic structure of (5,5)/(10,0) metal-semiconductor single wall carbon nanotube intramolecule junction
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Kan, Biao
Yuan, Ningyi
Wang, Junxiong
Chen, Zhigang
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PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (05): : 1590 - 1596

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