High temperature coefficient of resistance in vanadium oxide diodes

被引：2
|
作者：
Kuznetsov, VA
Haneman, D
机构：
[1] School of Physics, University of New South Wales, Sydney
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1997年 / 68卷 / 03期
关键词：
D O I：
10.1063/1.1147640
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Evidence regarding the high temperature coefficient of resistance (35% per degrees C) in vanadium bride multiple thin film diodes has been obtained, indicating that the source is a vanadium oxide substance formed between multiple layers of deposited vanadium. Effects of top contacts are detailed. The devices also show high sensitivity to mechanical pressure. (C) 1997 American Institute of Physics.
引用
收藏
页码：1518 / 1520
页数：3
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