Selective generation and amplification of RKKY interactions by a p-n interface

被引:5
|
作者
Zhang, Shu-Hui [1 ,2 ]
Zhu, Jia-Ji [3 ]
Yang, Wen [1 ]
Chang, Kai [4 ,5 ]
机构
[1] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
[2] Beijing Univ Chem Technol, Coll Sci, Beijing 100029, Peoples R China
[3] Chongqing Univ Posts & Telecommun, Sch Sci, Inst Quantum Informat & Spintron, Chongqing 400065, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
[5] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
基金
国家重点研发计划;
关键词
KASUYA-YOSIDA INTERACTION; FERROMAGNETISM; SPINTRONICS; GRAPHENE;
D O I
10.1103/PhysRevB.99.195456
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a physical mechanism to generate and selectively amplify anisotropic Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between two local spins. The idea is to combine the deflection of the carrier velocity by a p-n interface and the locking of this velocity to the carrier spin orientation via spin-orbit coupling. We provide analytical and numerical results to demonstrate this mechanism on the surface of a topological insulator p-n junction. This work identifies the p-n interface as a second knob which, together with the carrier density, enables independent control of the strength and anisotropy of the RKKY interaction over a wide range. These findings may be relevant to scalable quantum computation and two-impurity quantum criticality.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Focusing RKKY interaction by graphene P-N junction
    Zhang, Shu-Hui
    Zhu, Jia-Ji
    Yang, Wen
    Chang, Kai
    2D MATERIALS, 2017, 4 (03):
  • [2] CURRENT AMPLIFICATION BY SILICON P-N JUNCTION
    KANAI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1951, 6 (03) : 211 - 212
  • [3] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
    SAH, CT
    NOYCE, RN
    SHOCKLEY, W
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
  • [4] MICROWAVE AMPLIFICATION IN AVALANCHING SILICON P-N JUNCTIONS
    GORONKIN, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 378 - &
  • [5] The empirical p-n interactions and atomic masses
    Arima, Akito
    Zhao, Yu-Min
    HITES 2012: HORIZONS OF INNOVATIVE THEORIES, EXPERIMENTS, AND SUPERCOMPUTING IN NUCLEAR PHYSICS, 2012, 403
  • [6] Chiral interface states in graphene p-n junctions
    Cohnitz, Laura
    De Martino, Alessandro
    Haeusler, Wolfgang
    Egger, Reinhold
    PHYSICAL REVIEW B, 2016, 94 (16)
  • [7] CATHODE AMPLIFICATION IN P-N TRANSITIONS ON SILICON-CARBIDE
    VODAKOV, YA
    VOLFSON, AA
    MALTSEV, AA
    ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 57 (12): : 2405 - 2407
  • [8] PHOTOCURRENT AMPLIFICATION EFFECT OF THE FET GATE p-n JUNCTION
    Edgorova, D. M.
    JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS, 2009, 82 (01) : 190 - 197
  • [9] p-n Junction at the Interface between Metallic Systems
    Ramirez-Caballero, Gustavo
    de la Hoz, Julibeth M. Martinez
    Balbuena, Perla B.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2012, 3 (07): : 818 - 825
  • [10] AMPLIFICATION OF MINORITY CARRIER CURRENT IN NONIDEAL P-N JUNCTIONS
    STAFEEV, VI
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (10): : 2037 - 2052