Cavity-backed on-chip patch antenna in 0.13 μm SiGe BiCMOS technology

被引：3

作者：

Xiao Jun ^{[1
,2
]}

Li Xiu-Ping ^{[1
,2
]}

Qi Zi-Hang ^{[1
,2
]}

Zhu Hua ^{[1
,2
]}

Feng Wei-Wei ^{[1
,2
]}

机构：

[1] Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Beijing Key Lab Work Safety Intelligent Monitorin, Beijing 100876, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2019年 / 38卷 / 03期

基金：

中国国家自然科学基金;

关键词：

0.13 mu m SiGe BiCMOS technology; cavity backed; patch antenna; on-chip antenna; RECEIVER;

D O I：

10.11972/j.issn.1001-9014.2019.03.009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This letter presents a 340 GHz cavity-backed on-chip patch antenna design and fabrication using standard 0.13 mu m SiGe BiCMOS technology. The patch placed at AM layer is fed by a stripline at LY layer through via holes from LY to AM layer. The via holes are built between the top metal layer (AM layer) and the ground plane (M1 layer) to form a cavity which improves the impedance matching bandwidth and the radiation performances of the antenna. The proposed antenna shows a simulated impedance bandwidth of 9.2 GHz from 335.6 to 344.8 GHz for S-11 less than -10 dB. The simulated gain of the antenna at 340 GHz is 3.2 dBi. The total area of the antenna is 0.5 x 0. 56 mm(2).

引用

页码：310 / +

页数：6

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