Axisymmetric All-Carbon Devices with High-Spin Filter Efficiency, Large-Spin Rectifying, and Strong-Spin Negative Differential Resistance Properties

被引:20
|
作者
Hong, X. K. [1 ]
Kuang, Y. W. [1 ]
Qian, C. [1 ]
Tao, Y. M. [1 ]
Yu, H. L. [1 ]
Zhang, D. B. [1 ]
Liu, Y. S. [1 ]
Feng, J. F. [1 ]
Yang, X. F. [1 ]
Wang, X. F. [2 ]
机构
[1] Changshu Inst Technol, Coll Phys & Engn, Changshu 215500, Jiangsu, Peoples R China
[2] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Jiangsu, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2016年 / 120卷 / 01期
基金
中国国家自然科学基金;
关键词
GRAPHENE NANORIBBONS; MAGNETORESISTANCE; CONDUCTANCE; TRANSPORT; CHAIN;
D O I
10.1021/acs.jpcc.5b09180
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We propose the perfect all-carbon axisymmetric spintronic devices consisting of a zigzag-edged trigonal graphene (ZTG) linked to left and right zigzag-edged graphene nanoribbons (ZGNR) electrodes via carbon atomic chains (CACs). To ensure the stability of the system, the edge carbon atoms are passivated by hydrogen atoms. The self-consistent density functional theory (DFT) calculations show that the simple all-carbon system possesses the prefect spin-filtering property at a wide voltage region from -1.0 to 1.0 V. More importantly, the proposed system can act as a perfect dual spin diode in the antiparallel (AP) spin configuration, and the single-spin rectifying ratio can reach 103. When we add the number of the CACs linked to the left ZGNR electrode, the device shows the obvious single-spin negative differential resistance (NDR) behavior, which originates from the appearance of the localized states in the region of the left ZGNR electrode and ZTG. Meanwhile, the perfect spin-filtering and dual spin-diode properties are also retained in the all-carbon spintronic device, and the single-spin rectifying ratio can be enhanced to about 10(4).
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页码:668 / 676
页数:9
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