Applied voltage effect on the electron delocalization of excited Ce3+ in SrS:Ce electroluminescent devices

被引：3
|
作者：
Barthou, C
Benoit, J
Benalloul, P
Polamo, K
Soininen, E
机构：
[1] Univ Paris 06, CNRS, UMR7601, Lab Opt Solides, F-75252 Paris, France
[2] Planar Syst Inc, FIN-02201 Espoo, Finland
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 02期
关键词：
D O I：
10.1063/1.373777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electro-optical behavior of SrS:Ce atomic layer epitaxy thin films electroluminescent devices with Ce3+ ions in different point symmetries is analyzed. Under selective photonic excitation in the lower absorption band and for voltage below the EL threshold, it is shown that the delocalization probability of Ce3+ excited ions is much lower for Ce3+ ions in octahedral sites than in lower symmetry ones. (C) 2000 American Institute of Physics. [S0021-8979(00)04814-3].
引用
收藏
页码：1061 / 1066
页数：6
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