Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

被引：0
|
作者：
Yao, SD [1 ]
Zhou, SQ
Jiao, SX
Meng, ZX
Lu, YH
Sun, CC
Sun, C
Vantomme, A
Langouche, G
Pipeleers, B
Zhao, Q
机构：
[1] Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China
[2] Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium
来源：
SURFACE & COATINGS TECHNOLOGY | 2002年 / 158卷
关键词：
ion implantation; Rutherford backscattering spectrometry; Hall effect;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling were studied. The samples were grown on sapphire by metal-organic vapor-phase epitaxy. The H+, He+, N+ with different ion energies and doses were implanted into GaN. Post-implantation annealing were investigated. We observed 7-8 orders increasing of resistivity by Hall measurements after specific temperature annealing, and the optimized annealing temperature is approximately 200-400 degreesC for H+, He+ and N+ respectively. Even after 600-700 degreesC annealing, the resistivity is still very high. We think vacancies and radioactive damage by implantation are responsible for resistivity changes in GaN samples. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：412 / 415
页数：4
相关论文
共 50 条
  • [1] Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam
    Shude, Yao
    Shengqiang, Zhou
    Shengxian, Jiao
    Zhaoxiang, Meng
    Yihong, Lu
    Changchun, Sun
    Chang, Sun
    Vantomme, A.
    Langouche, G.
    Pipeleers, B.
    Zhao, Q.
    Surface and Coatings Technology, 2002, 158-159 : 412 - 415
  • [2] Charge carrier lifetime modification in silicon by high energy H+ or He+ ion implantation
    Khanh, NQ
    Tutto, P
    Buiu, O
    Jaroli, EN
    Biro, LP
    Manuaba, A
    Gyulai, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 388 - 392
  • [3] Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation
    Khanh, NQ
    Tutto, P
    Jaroli, EN
    Buiu, O
    Biro, LP
    Paszti, F
    Mohacsy, T
    Kovacsics, C
    Manuaba, A
    Gyulai, J
    MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 101 - 106
  • [4] Counterstreaming Cold H+, He+, O+, and N+ Outflows in the Plasmasphere
    Krall, J.
    Huba, J. D.
    FRONTIERS IN ASTRONOMY AND SPACE SCIENCES, 2021, 8
  • [5] Valine Radiolysis by H+, He+, N+, and S15+ MeV Ions
    da Costa, Cintia A. P.
    Muniz, Gabriel S. Vignoli
    Boduch, Philippe
    Rothard, Hermann
    da Silveira, Enio F.
    INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, 2020, 21 (05)
  • [6] BACKSCATTERING OF H+, HE+, C+, AND N+ FROM THIN AU FILMS
    HEDGECOCK, NE
    PATEL, JS
    VANWIJNGAARDEN, A
    BAYLIS, WE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (09): : 1116 - 1116
  • [7] Surface modification of olivine by H+ and He+ bombardment
    Dukes, CA
    Baragiola, RA
    McFadden, LA
    JOURNAL OF GEOPHYSICAL RESEARCH-PLANETS, 1999, 104 (E1) : 1865 - 1872
  • [8] Waveguide formation by He+ and H+ ion implantation in filter glass containing nanoparticles
    Okur, I
    Townsend, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 124 (01): : 76 - 80
  • [9] Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon
    Cherkashin, N.
    Daghbouj, N.
    Seine, G.
    Claverie, A.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
  • [10] VIBRATIONAL EXCITATION IN ION-MOLECULE COLLISIONS - H+ H2+ HE+ N+ NE+ AND ELECTRONS ON N2
    MOORE, JH
    DOERING, JP
    PHYSICAL REVIEW, 1969, 177 (01): : 218 - &
12345