An integrated approach to doped thin films with strain-tunable magnetic anisotropy: powder synthesis, target preparation and pulsed laser deposition of Bi:YIG
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作者:
Sellappan, Pathikumar
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Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USAUniv Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Sellappan, Pathikumar
[1
,2
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Tang, Chi
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Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USAUniv Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Tang, Chi
[3
]
Shi, Jing
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Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USAUniv Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Shi, Jing
[1
,3
]
Garay, Javier E.
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Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USAUniv Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
Garay, Javier E.
[1
,2
]
机构:
[1] Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
[3] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced anisotropy. In addition, the perpendicular anisotropy is tunable by decreasing the film thickness and overwhelms the shape anisotropy at a critical thickness of 3.5 nm. [GRAPHICS] IMPACT STATEMENT Strain-induced perpendicular magnetic anisotropy (PMA) in heavily Bi substituted YIG films for ferrimagnetic insulator based spintronic studies and devices.
机构:
Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Bhoi, B.
Sahu, B.
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Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Sahu, B.
Venkataramani, N.
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Indian Inst Technol, Dept Met & Mat Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Venkataramani, N.
Aiyar, R. P. R. C.
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Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Aiyar, R. P. R. C.
Prasad, Shiva
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Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India