Quantum dot dephasing by edge states

被引：31
|
作者：
Levinson, Y [1 ]
机构：
[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.61.4748
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculate the dephasing rate of an electron state in a pinched quantum dot, due to Coulomb interactions between the electron in the dot and electrons in a nearby voltage-biased ballistic nanostructure. The dephasing is caused by nonequilibrium time fluctuations of the electron density in the nanostructure, which create random electric fields in the dot. As a result, the electron level in the dot fluctuates in time, and the coherent part of the resonant transmission through the dot is suppressed.
引用
收藏
页码：4748 / 4753
页数：6
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