Uncooled Short-Wave Infrared Sensor Based on PbS Quantum Dots Using ZnO NPs

被引:14
|
作者
Kwon, JinBeom [1 ]
Kim, SaeWan [1 ]
Lee, JaeSung [2 ]
Park, CheolEon [1 ]
Kim, OkSik [1 ]
Xu, Binrui [1 ]
Bae, JinHyuk [1 ]
Kang, ShinWon [1 ]
机构
[1] Kyungpook Natl Univ, Coll It Engn, Sch Elect Engn, 1370 Sankyuk Dong, Daegu 702701, South Korea
[2] Korea Inst Sci & Technol, Sensor Syst Res Ctr, 5 Hwarang Ro 14 Gil, Seoul 02792, South Korea
来源
NANOMATERIALS | 2019年 / 9卷 / 07期
基金
新加坡国家研究基金会;
关键词
Infrared; SWIR sensor; PbS; Quantum dots; Lead sulfide; SOLAR-CELLS; NANOPARTICLES; NANOCRYSTALS; HETEROJUNCTION; EFFICIENCY;
D O I
10.3390/nano9070926
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current-voltage (I-V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs' high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.
引用
收藏
页数:9
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