Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

被引：4
|
作者：
Chen, Nie-Chuan [1 ]
Tseng, Chien-Yuan [1 ]
Lin, Hsin-Tung [1 ]
机构：
[1] Chang Gung Univ, Inst Electroopt Engn, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 03期
关键词：
Surface structure; Metal-organic chemical vapor deposition; Sapphire; Semiconducting III-V materials; Heterojunction semiconductor devices; High electron mobility transistors; 2-DIMENSIONAL ELECTRON-GAS; PIEZOELECTRIC POLARIZATION; HETEROSTRUCTURE; PERFORMANCE;
D O I：
10.1016/j.jcrysgro.2008.09.102
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effects of surface state on sheet carrier density in the Al-0.17/Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803 x 10(13) e/cm(2). However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the Surface conditions of the samples that were prepared for Hall and C-V measurements, To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：859 / 862
页数：4
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